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| inchange semiconductor product specification silicon pnp power transistors 2SB1605 2SB1605a description ? with to-220f package ? low collector saturation voltage ? good linearity of h fe applications ? for low-voltage switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions max unit 2SB1605 -60 v cbo collector-base voltage 2SB1605a open emitter -80 v 2SB1605 -60 v ceo collector-emitter voltage 2SB1605a open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -3 a i cm collector current-peak -5 a t a =25 ?? 2 p c collector dissipation t c =25 ?? 35 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2SB1605 2SB1605a characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2SB1605 -60 v (br)ceo collector-emitter breakdown voltage 2SB1605a i c =-30ma ;i b =0 -80 v v cesat collector-emitter saturation voltage i c =-3a ;i b =-0.375a -1.2 v v be base-emitter on voltage i c =-3a ; v ce =-4v -1.8 v 2SB1605 v ce =-60v; v be =0 i ces collector cut-off current 2SB1605a v ce =-80v; v be =0 -200 | a 2SB1605 v ce =-30v; i b =0 i ceo collector cut-off current 2SB1605a v ce =-60v; i b =0 -300 | a i ebo emitter cut-off current v eb =-5v; i c =0 -1 ma h fe-1 dc current gain i c =-1a ; v ce =-4v 70 250 h fe-2 dc current gain i c =-3a ; v ce =-4v 10 f t transition frequency i c =-0.5a ; v ce =-10v 30 mhz switching times t on turn-on time 0.5 | s t stg storage time 1.2 | s t f fall time i c =-1a; i b1 =-i b2 =-0.1a 0.3 | s ? h fe-1 classifications q p 70-150 120-250 inchange semiconductor product specification 3 silicon pnp power transistors 2SB1605 2SB1605a package outline fig.2 outline dimensions inchange semiconductor product specification 4 silicon pnp power transistors 2SB1605 2SB1605a |
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